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PDF BUK110-50DL Data sheet ( Hoja de datos )
| Número de pieza | BUK110-50DL | |
| Descripción | PowerMOS transistor Logic level TOPFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK110-50DL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic surface
mount envelope, intended as a
general purpose switch for
automotive systems and other
applications.
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
IISL
Input supply current
VIS = 5 V
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
45
125
150
35
650
UNIT
V
A
W
˚C
mΩ
µA
DRAIN
POWER
MOSFET
SOURCE
PINNING - SOT404
PIN DESCRIPTION
1 input
2 drain
3 source
mb drain
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
SYMBOL
mb D
TOPFET
2
13
I
P
S
June 1996
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK110-50DL
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.3. Normalised continuous drain current.
ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V
ID & IDM / A
1000
BUK110-50DL
Overload protection characteristics not shown
100
RDS(ON) = VDS/ID
tp =
100 us
10
DC
1 ms
10 ms
100 ms
1
1
10 100
VDS / V
Fig.4. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
10
BUK110-50DL
1 D=
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0
PD tp
D
=
tp
T
0.001
1E-07
1E-05
1E-03
t/s
T
1E-01
t
Fig.5. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1E+01
ID / A
80
70
60
50
40
30
20
10
VIS / V =
BUK110-50DL
6
5.5
5
4.5
4
3.5
3
0
0
Fig.6.
12 34 5
VDS / V
Typical on-state characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 2 ms
RDS(ON) / mOhm
80
BUK110-50DL
70 VIS / V =
60 3.5 4 4.5 5 5.5
6
50
40
30
20
10
0
0 20 40 60 80
ID / A
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VIS; tp = 2 ms
June 1996
5
Rev 1.000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUK110-50DL.PDF ] | |
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