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BUK127-50DL 데이터시트 PDF




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부품번호 BUK127-50DL 기능
기능 PowerMOS transistor Logic level TOPFET
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BUK127-50DL 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK127-50DL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in TOPFET2 technology
assembled in a 3 pin surface mount
plastic package.
APPLICATIONS
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS Continuous drain source voltage
ID Continuous drain current
PD Total power dissipation
Tj
RDS(ON)
Continuous junction temperature
Drain-source on-state resistance
FEATURES
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V
CLAMP
RIG
LOGIC AND
PROTECTION
MAX.
50
0.7
1.8
150
200
UNIT
V
A
W
˚C
m
DRAIN
POWER
MOSFET
PINNING - SOT223
PIN DESCRIPTION
1 input
2 drain
3 source
4 drain (tab)
SOURCE
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
4
SYMBOL
D
TOPFET
I
P
123
S
October 1999
1
Rev 1.000




BUK127-50DL pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK127-50DL
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL PARAMETER
CONDITIONS
MIN.
Overload protection
ID Drain current limiting
-40˚C Tj 150˚C
VIS = 5 V
VIS = 4.5 V
VIS = 4 V to 5.5 V
0.8
0.7
0.6
TYP.
1.3
-
-
MAX. UNIT
1.7 A
-A
1.8 A
PD(TO)
TDSC
Tj(TO)
Short circuit load protection VIS = 5 V
Overload power threshold
for protection to operate
- 17 - W
Characteristic time
which determines trip time1
- 1.6 - ms
Overtemperature protection from ID 280 mA or VDS 100 mV
Threshold junction temperature VIS = 4 V to 5.5 V
150 165
-
˚C
SWITCHING CHARACTERISTICS
Ta = 25˚C; resistive load RL = 50 ; adjust VDD to obtain ID = 250 mA; refer to test circuit and waveforms
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
td on Turn-on delay time
tr Rise time
td off Turn-off delay time
tf Fall time
VIS: 0 V 5 V
VIS: 5 V 0 V
- 5 12 µs
- 11 30 µs
- 25 65 µs
- 14 35 µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER
IS Continuous forward current
CONDITIONS
Tmb 25 ˚C; VIS = 0 V
MIN.
-
MAX.
2
UNIT
A
REVERSE DIODE CHARACTERISTICS
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
VSDO
trr
Forward voltage
Reverse recovery time
IS = 2 A; VIS = 0 V; tp = 300 µs
not applicable2
-
-
TYP.
0.83
-
MAX. UNIT
1.1 V
--
1 Trip time td sc varies with overload dissipation PD according to the formula td sc TDSC / [ PD / PD(TO) - 1 ].
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
October 1999
4
Rev 1.000

4페이지










BUK127-50DL 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Product specification
BUK127-50DL
VISR / V
3
BUK127-50DL
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25
0 25 50 75 100 125
Tj / C
Fig.14. Typical Protection reset voltage.
VISR = f(Tj); tlr = 100 µs.
150
ID / mA
400
BUK127-50DL
VIS & VDS / V
15
10
VIS
5
BUK127-50DL
VDS
0
-40 -20 0 20 40 60 80 100 120 140 160
time / us
Fig.17. Typical switching waveforms, resistive load .
RL = 50 ; adjust VDD to obtain ID = 250 mA; Tj = 25˚C
IDSS
10 uA
BUK127-50DL
300
200
TYP.
100
1 uA
100 nA
0
56 58 60 62 64 66 68
VDS / V
Fig.15. Overvoltage clamping characteristic, 25˚C.
ID = f(VDS); conditions: VIS = 0 V; tp 300 µs
VDD
10 nA
-50
0 50 100 150
Tj / C
Fig.18. Typical drain source leakage current
IDSS = f(Tj); conditions: VDS = 40 V; VIS = 0 V.
RL
D
TOPFET
VDS
measure
I
P
D.U.T.
VIS S
0V
Fig.16. Test circuit for resistive load switching times.
VIS = 5 V
October 1999
7
Rev 1.000

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부품번호상세설명 및 기능제조사
BUK127-50DL

PowerMOS transistor Logic level TOPFET

NXP Semiconductors
NXP Semiconductors

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