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PDF BUK201-50Y Data sheet ( Hoja de datos )
| Número de pieza | BUK201-50Y | |
| Descripción | PowerMOS transistor TOPFET high side switch | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK201-50Y
DESCRIPTION
Monolithic temperature and
overload protected power switch
based on MOSFET technology in a
5 pin plastic envelope, configured
as a single high side switch.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL PARAMETER
VBG Continuous off-state supply voltage
IL Continuous load current
Tj Continuous junction temperature
RON On-state resistance
MIN.
6
UNIT
A
MAX.
50
15
150
60
UNIT
V
A
˚C
mΩ
FEATURES
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
Very low quiescent current
Voltage clamping for turn off of
inductive loads
ESD protection on all pins
Reverse battery and
overvoltage protection
PINNING - SOT263
PIN DESCRIPTION
1 Ground
2 Input
3 Battery (+ve supply)
4 Status
5 Load
tab connected to pin 3
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
BATT
POWER
MOSFET
LOAD
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PIN CONFIGURATION
SYMBOL
tab
1 2345
leadform
263-01
Fig. 2.
IB
TOPFET L
S HSS
G
Fig. 3.
July 1996
1 Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK201-50Y
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C; VBG = 13 V
SYMBOL PARAMETER
CONDITIONS
Inductive load turn-off
-VLG Negative load voltage1
VIG = 0 V; IL = 7.5 A; tp = 300 µs
Short circuit load protection2 VIG = 5 V; RL ≤ 10 mΩ
td sc Response time
IL Load current prior to turn-off t < td sc
Overload protection3
IL(lim) Load current limiting
VBL = 9 V; tp = 300 µs
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
td on
dV/dton
During turn-on
Delay time
Rate of rise of load voltage
to VIG = 5 V
to 10% VL
t on Total switching time
to 90% VL
td off
dV/dtoff
t off
During turn-off
Delay time
Rate of fall of load voltage
Total switching time
to VIG = 0 V
to 90% VL
to 10% VL
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V
SYMBOL PARAMETER
Cig Input capacitance
Cbl Output capacitance
Csg Status capacitance
CONDITIONS
VBG = 13 V
VBL = VBG = 13 V
VSG = 5 V
MIN. TYP. MAX. UNIT
15 20 25
V
- 90 - µs
- 42 -
A
28 40 52
A
MIN. TYP. MAX. UNIT
- 16 - µs
- 1 2.5 V/µs
- 40 - µs
- 30 - µs
- 1.2 2.5 V/µs
- 50 - µs
MIN.
-
-
-
TYP.
15
415
11
MAX.
20
580
15
UNIT
pF
pF
pF
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in
current limiting until the overtemperature protection operates.
July 1996
5 Rev 1.000
5 Page 
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK201-50Y
IL / A
60
BUK201-50Y
50
typ.
40
30
20
10
0
-50 0 50 100 150 200
Tmb / C
Fig.34. Typical overload current, VBL = 9 V.
IL = f(Tmb); conditions VBG = 13 V; tp = 300 µs
VBL(TO) / V
12
BUK201-50Y
11
10
9
8
0
10 20 30
VBG / V
40
Fig.35. Typical short circuit load threshold voltage.
VBL(TO) = f(VBG); condition Tmb = 25 ˚C
VBL(TO) / V
15
BUK201-50Y
14
13
12
11
10
9
8
7
6
5
-60 -20 20 60 100 140 180
Tmb / C
Fig.36. Typical short circuit load threshold voltage.
VBL(TO) = f(Tmb); condition VBG = 13 V
Zth j-mb / (K/W)
10
BUK201-50Y
D=
1
0.5
0.2
0.1
0.1 0.05
0.02
PD tp
D
=
tp
T
0.01
0
100n 1u
Tt
10u 100u 1m 10m 100m 1
t/s
Fig.37. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
10
July 1996
11 Rev 1.000
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BUK201-50Y.PDF ] | |
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