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Número de pieza | BUK436W-800A | |
Descripción | PowerMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUK436W-800A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
PowerMOS transistor
Product specification
BUK436W-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
BUK436
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-800A
800
4
125
3
MAX.
-800B
800
3.5
125
4
UNIT
V
A
W
Ω
PINNING - SOT429 (TO247)
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 kΩ
-
-
-
-
ID Drain current (DC)
Tmb = 25 ˚C
ID Drain current (DC)
Tmb = 100 ˚C
IDM Drain current (pulse peak value) Tmb = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction temperature
Tmb = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MAX.
800
800
30
-800A
4.0
2.5
16
-800B
3.5
2.2
14
125
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 1.0 K/W
- 45 - K/W
February 1998
1
Rev 1.000
1 page Philips Semiconductors
PowerMOS transistor
Product specification
BUK436W-800A/B
VGS / V
12
10
BUK4y6-800
VDS / V =160
8
640
6
4
2
0
0 20 40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 4 A; parameter VDS
IF / A
10
BUK4y6-800A
Tj / C = 150
5
25
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
February 1998
5
Rev 1.000
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BUK436W-800A.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUK436W-800A | PowerMOS transistor | NXP Semiconductors |
BUK436W-800A | PowerMOS transistor | NXP Semiconductors |
BUK436W-800B | PowerMOS transistor | NXP Semiconductors |
BUK436W-800B | PowerMOS transistor | NXP Semiconductors |
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