|
|
Número de pieza | BUK446-800B | |
Descripción | PowerMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUK446-800B (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
PowerMOS transistor
Product Specification
BUK446-800A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
BUK446
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-800A
800
2.0
30
3
MAX.
-800B
800
1.7
30
4
UNIT
V
A
W
Ω
PINNING - SOT186
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 kΩ
-
-
-
-
ID Drain current (DC)
Ths = 25 ˚C
ID Drain current (DC)
Ths = 100 ˚C
IDM Drain current (pulse peak value) Ths = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Ths = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MAX.
800
800
30
-800A
2.0
1.3
8
-800B
1.7
1.1
6.8
30
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 4.16 K/W
- 55 - K/W
May 1995 1 Rev 1.200
1 page Philips Semiconductors
PowerMOS transistor
Product Specification
BUK446-800A/B
12 VGS / V
10
BUK4y6-800
VDS / V =160
8
640
6
4
2
0
0 20 40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 4 A; parameter VDS
IF / A
10
BUK4y6-800A
Tj / C = 150
5
25
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
May 1995 5 Rev 1.200
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BUK446-800B.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUK446-800A | PowerMOS transistor | NXP Semiconductors |
BUK446-800A | N-Channel MOSFET Transistor | Inchange Semiconductor |
BUK446-800B | PowerMOS transistor | NXP Semiconductors |
BUK446-800B | N-Channel MOSFET Transistor | Inchange Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |