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PDF BUK451-100B Data sheet ( Hoja de datos )
| Número de pieza | BUK451-100B | |
| Descripción | PowerMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Preliminary Specification
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
BUK451
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-100A
100
3.0
40
175
0.85
MAX.
-100B
100
3.0
40
175
1.1
UNIT
V
A
W
˚C
Ω
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 kΩ
-
-
-
-
ID Drain current (DC)
Tmb = 25 ˚C
ID Drain current (DC)
Tmb = 100 ˚C
IDM Drain current (pulse peak value) Tmb = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Tmb = 25 ˚C
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
-100A
3.0
3.0
12
-100B
3.0
3.0
12
40
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
1 page  
Philips Semiconductors
PowerMOS transistor
Preliminary Specification
BUK451-100A/B
VGS / V
15
10
5
BUK4y1-100A
VDS / V = 20
80
0
0246
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 3 A; parameter VDS
IF / A
10
BUK4y1-100A
9
8
7
6
5
Tj / C = 150
4
3
25
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
January 1980
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUK451-100B.PDF ] | |
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