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PDF BUK462-100A Data sheet ( Hoja de datos )
| Número de pieza | BUK462-100A | |
| Descripción | PowerMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Product specification
BUK462-100A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a plastic
envelope suitable for surface mount
applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
general purpose switching
applications.
SYMBOL
VDS
ID
Ptot
Tj
RDS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
100
11
60
175
0.25
UNIT
V
A
W
˚C
Ω
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain (no connection
possible)
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
minimum footprint
FR4 board (see fig. 18.)
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
11
7.7
44
60
175
175
MIN. TYP. MAX.
- - 2.5
- 50 -
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
April 1998 1 Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Product specification
BUK462-100A
VGS / V
12
10
8
BUK452-100
VDS / V =20
80
6
4
2
0
0 2 4 6 8 10
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 11 A; parameter VDS
IF / A
BUK452-100A
20
10
Tj / C =
150
25
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 11 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
April 1998 5 Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUK462-100A.PDF ] | |
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