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PDF BUK465-60H Data sheet ( Hoja de datos )
| Número de pieza | BUK465-60H | |
| Descripción | PowerMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
Product specification
BUK465-60H
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
43
125
175
34
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
minimum footprint,
FR4 board (see Fig. 18).
MAX.
60
60
30
43
31
172
125
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
TYP.
-
50
MAX. UNIT
1.2 K/W
- K/W
August 1995
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Product specification
BUK465-60H
VGS / V
20
BUK4Y5-60H
15
VDD / V = 12
48
10
5
0
0 10 20 30 40 50 60
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 43 A; parameter VDS
IS / A
100
Tj / C =
80
-40
25
150
60
BUKXY5-60H
40
20
0
0 0.5 1 1.5
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 43 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
August 1995
5
Rev 1.000
5 Page | ||
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| PDF Descargar | [ Datasheet BUK465-60H.PDF ] | |
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