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Número de pieza | BUK466-200A | |
Descripción | PowerMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUK466-200A (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Philips Semiconductors
PowerMOS transistor
Product specification
BUK466-200A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a plastic
envelope suitable for use in surface
mount applications.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and in
general purpose switching
applications.
SYMBOL
VDS
ID
Ptot
Tj
RDS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
200
19
150
175
0.16
UNIT
V
A
W
˚C
Ω
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
minimum footprint,
FR4 board (see Fig. 18).
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
200
200
30
19
13
76
150
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX.
- - 1.0
- 50 -
UNIT
K/W
K/W
February 1996
1
Rev 1.000
1 page Philips Semiconductors
PowerMOS transistor
Product specification
BUK466-200A
12 VGS / V
10
BUK456-200
VDS / V =40
8
160
6
4
2
0
0 10 20 30 40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 19 A; parameter VDS
IF / A
40
BUK456-200A
30
Tj / C = 150
25
20
10
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
February 1996
5
Rev 1.000
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BUK466-200A.PDF ] |
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