Datasheet.kr   

BUK473-60A 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK473-60A은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BUK473-60A 자료 제공

부품번호 BUK473-60A 기능
기능 PowerMOS transistor Isolated version of BUK453-60A/B
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


BUK473-60A 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

BUK473-60A 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
Isolated version of BUK453-60A/B
Product specification
BUK473-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The
device is intended for use in Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in automotive
and general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
BUK473
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
MAX.
-60A
60
13
25
0.08
MAX.
-60B
60
12
25
0.1
UNIT
V
A
W
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 k
-
-
-
-
ID Drain current (DC)
Ths = 25 ˚C
ID Drain current (DC)
Ths = 100 ˚C
IDM Drain current (pulse peak value) Ths = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction temperature
Ths = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MAX.
60
60
30
-60A
13
8.2
52
-60B
12
7.6
48
25
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 5 K/W
- 55 - K/W
November 1996
1
Rev 1.200




BUK473-60A pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Product specification
BUK473-60A/B
45 ID / A
20 15 10
BUK453-50A
VGS / V = 8
30
7
15 6
5
4
0
0 2 4 6 8 10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
0.5
4 5 5.5 6
0.4
4.5
0.3
6.5 7
BUK453-50A
VGS / V =
7.5
8
0.2
0.1 10
0
0
Fig.6.
20
10 20 30
ID / A
40
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
ID / A
40
Tj / C =
30
25
BUK453-50A
150
20
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
8
BUK453-50A
7
6
5
4
3
2
1
0
0 10 20 30 40
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 9 A; VGS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
November 1996
4
Rev 1.200

4페이지










BUK473-60A 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Product specification
BUK473-60A/B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1996
7
Rev 1.200

7페이지


구       성 총 7 페이지수
다운로드[ BUK473-60A.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BUK473-60A

PowerMOS transistor Isolated version of BUK453-60A/B

NXP Semiconductors
NXP Semiconductors
BUK473-60B

PowerMOS transistor Isolated version of BUK453-60A/B

NXP Semiconductors
NXP Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵