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PDF BUK474-60H Data sheet ( Hoja de datos )
| Número de pieza | BUK474-60H | |
| Descripción | PowerMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
Product specification
BUK474-60H
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
21
30
150
38
PIN CONFIGURATION
case
SYMBOL
d
12 3
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 kΩ
-
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
TYP.
-
55
MAX.
60
60
30
21
13
84
30
150
150
MAX.
4.17
-
UNIT
V
A
W
˚C
mΩ
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
February 1996
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Product specification
BUK474-60H
ID / A
1E-01
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
C / pF
10000
BUK474-60H
1000
Ciss
Coss
Crss
100
0.01
0.1 1 10
VDS / V
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
VGS / V
12
10
8
VDS / V = 12
BUK474-60H
48
6
4
2
0
0 10 20 30 40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 41 A; parameter VDS
IF / A
80
Tj / C =
70
60
-40
25
150
BUK474-60H
50
40
30
20
10
0
0 0.5 1 1.5 2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Ths / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 41 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
February 1996
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUK474-60H.PDF ] | |
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