|
|
|
부품번호 | BUK482-100A 기능 |
|
|
기능 | PowerMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 8 페이지수
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK482-100A
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 10 V
MAX.
100
1.8
1.8
150
0.28
PIN CONFIGURATION
4
SYMBOL
d
123
g
s
UNIT
V
A
W
˚C
Ω
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
-
RGS = 20 kΩ
-
Tamb = 25 ˚C
Tamb = 100 ˚C
Tamb = 25 ˚C
Tamb = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
1.8
1.1
7.2
1.8
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-b
Rth j-amb
PARAMETER
From junction to board1
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
MIN.
-
-
TYP. MAX. UNIT
40 - K/W
- 70 K/W
1 Temperature measured 1-3 mm from tab.
January 1998
1
Rev 1.100
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK482-100A
7 ID/ A
BUK482-100A
6
5
4
3
2
1
Tj/ C = 150
25
0
02468
VGS/ V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs/ S
5
BUK482-100A
4
3
2
1
0
0246
ID/ A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.0 a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.8 A; VGS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01 ID / A
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
01234
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
C / pF
10000
1000
Ciss
100
Coss
Crss
10
0 20 40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
January 1998
4
Rev 1.100
4페이지 Philips Semiconductors
PowerMOS transistor
Product Specification
BUK482-100A
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
0.32
0.24
6.7
6.3
3.1
2.9
4
B
A
0.2 M A
0.10
0.02
3.7 7.3
3.3 6.7
16 13
max
10
max
1.8 1.05
max 0.85
12
2.3 0.80
0.60
4.6
3
0.1 M B
(4x)
Fig.18. SOT223 surface mounting package.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
January 1998
7
Rev 1.100
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ BUK482-100A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUK482-100A | PowerMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |