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PDF BUK482-200A Data sheet ( Hoja de datos )
| Número de pieza | BUK482-200A | |
| Descripción | PowerMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Product specification
BUK482-200A
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mounting featuring high avalanche
energy capability, stable blocking
voltage, fast switching and high
thermal cycling performance.
Intended for use in Switched Mode
Power Supplies (SMPS) and general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
200
2.0
8.3
0.9
UNIT
V
A
W
Ω
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
IDM
IDR
IDRM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
RGS = 20 kΩ
Tsp = 25 ˚C
Tsp = 100 ˚C
Tsp = 25 ˚C
Tsp = 25 ˚C
Tsp = 25 ˚C
Tsp = 25 ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ;
RGS = 50 Ω
Tj = 25˚C prior to surge
Tj = 100˚C prior to surge
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MIN.
-
-
MAX.
200
200
30
2.0
1.3
8.0
2.0
8.0
8.3
150
150
MAX.
50
8
UNIT
V
V
V
A
A
A
A
A
W
˚C
˚C
UNIT
mJ
mJ
January 1998
1
Rev 1.000
1 page  
Philips Semiconductors
PowerMOS transistor
Product specification
BUK482-200A
15 VGS / V
10
BUK482-200A
VDS = 40 V
160 V
5
0
0 5 10 15 20
Qg / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 2 A; parameter VDS
IF / A
8
BUK482-200A
7
6
5
4
Tj = 150 C
25 C
3
2
1
0
0 0.5 1 1.5
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
Normalised Avalanche Energy
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Tamb/ C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tamb); conditions: ID = 2 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
January 1998
5
Rev 1.000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUK482-200A.PDF ] | |
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