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BUK545-60H 데이터시트 PDF




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기능 PowerMOS transistor Logic level FET
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BUK545-60H 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
Logic level FET
Product specification
BUK545-60H
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in
a plastic full-pack envelope.
The device is intended for use in
Automotive applications, Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
MAX.
60
21
30
150
38
PINNING - SOT186
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source
voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
-
RGS = 20 k
-
tp 50 µs
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
With heatsink compound
TYP.
-
55
MAX.
60
60
15
20
21
13.5
82
30
150
150
MAX.
4.17
-
UNIT
V
A
W
˚C
m
UNIT
V
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
August 1994
1
Rev 1.000




BUK545-60H pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Logic level FET
Product specification
BUK545-60H
ID / A
100
15
10 6
80
60
40
BUK5Y5-60H
5
4.5
4
3.5
20 3
VGS / V = 2.5
0
0 2 4 6 8 10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
0.2
2.5 3
3.5
4
0.15
BUK5Y5-60H
4.5
VGS / V = 5
0.1
0.05
10
6
0
0
Fig.6.
15
20 40 60 80 100
ID / A
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
ID / A
100
BUK5Y5-60H
80
60
40
20 Tj / C =
-40
25
150
0
012345678
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
40
BUK5Y5-60H
30
20
10
Tj / C =
-40
25
150
0
0 20 40 60 80 100
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 10 V
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 5 V
VGS(TO) / V
2
1
max.
typ.
min.
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
August 1994
4
Rev 1.000

4페이지










BUK545-60H 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Logic level FET
Product specification
BUK545-60H
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1994
7
Rev 1.000

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