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부품번호 | BUK555-100A 기능 |
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기능 | PowerMOS transistor Logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 7 페이지수
Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK555-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
BUK555
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
MAX.
-100A
100
25
125
175
0.085
PIN CONFIGURATION
SYMBOL
tab
MAX.
-100B
100
22
125
175
0.11
d
UNIT
V
A
W
˚C
Ω
1 23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
-
Drain-gate voltage
Gate-source voltage
RGS = 20 kΩ
-
Non-repetitive gate-source voltage tp ≤ 50 µs
-
-
-
-
ID Drain current (DC)
Tmb = 25 ˚C
ID Drain current (DC)
Tmb = 100 ˚C
IDM Drain current (pulse peak value) Tmb = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Tmb = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MAX.
100
100
15
20
-100A
25
18
100
-100B
22
15
88
125
175
175
UNIT
V
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 1.2 K/W
- 60 - K/W
April 1993 1 Rev 1.100
Philips Semiconductors
PowerMOS transistor
Logic level FET
ID / A
50
40
Tj / C =
BUK555-100A
25
150
30
20
10
0
02468
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
20
BUK555-100A
15
10
5
0
0 20 40
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
a
2.4
Normalised RDS(ON) = f(Tj)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100 140 180
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VGS = 5 V
Product Specification
BUK555-100A/B
VGS(TO) / V
2
1
max.
typ.
min.
0
-60 -20 20 60 100 140 180
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID / A
1E-01
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
0 0.4 0.8 1.2 1.6 2 2.4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
C / pF
10000
BUK5y5-100
1000
100
Ciss
Coss
Crss
10
0 20 40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1993 4 Rev 1.100
4페이지 Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK555-100A/B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1993 7 Rev 1.100
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK555-100 | PowerMOS transistor Logic level FET | NXP Semiconductors |
BUK555-100A | PowerMOS transistor Logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |