BUK555-100B Datasheet PDF - NXP Semiconductors
| Part Number | BUK555-100B | |
| Description | PowerMOS transistor Logic level FET | |
| Manufacturers | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK555-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
BUK555
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
MAX.
-100A
100
25
125
175
0.085
PIN CONFIGURATION
SYMBOL
tab
MAX.
-100B
100
22
125
175
0.11
d
UNIT
V
A
W
˚C
Ω
1 23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
-
Drain-gate voltage
Gate-source voltage
RGS = 20 kΩ
-
Non-repetitive gate-source voltage tp ≤ 50 µs
-
-
-
-
ID Drain current (DC)
Tmb = 25 ˚C
ID Drain current (DC)
Tmb = 100 ˚C
IDM Drain current (pulse peak value) Tmb = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Tmb = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MAX.
100
100
15
20
-100A
25
18
100
-100B
22
15
88
125
175
175
UNIT
V
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 1.2 K/W
- 60 - K/W
April 1993 1 Rev 1.100
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Philips Semiconductors
PowerMOS transistor
Logic level FET
12 VGS / V
10
BUK555-100
VDS / V =20
8 80
6
4
2
0
0 20 40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 25 A; parameter VDS
IF / A
50
BUK555-100A
40
30
20
Tj / C = 150
10
25
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Product Specification
BUK555-100A/B
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 25 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
April 1993 5 Rev 1.100
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUK555-100B electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUK555-100B.PDF Datasheet ] | |
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