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BUK573-48C 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK573-48C은 전자 산업 및 응용 분야에서
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부품번호 BUK573-48C 기능
기능 PowerMOS transistor Clamped logic level FET
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BUK573-48C 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
GENERAL DESCRIPTION
Protected N-channel enhancement
mode logic level field-effect power
transistor in a plastic full-pack
envelope.
The device is intended for use in
automotive applications. It has
built-in zener diodes providing active
drain voltage clamping.
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
QUICK REFERENCE DATA
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V(CL)DSR
ID
Ptot
WDSRR
RDS(ON)
Drain-source clamp voltage
Drain current (DC)
Total power dissipation
Repetitive clamped turn off
energy; Tj = 150˚C
Drain-source on-state
resistance; VGS = 5 V
40 48 58 V
13 A
25 W
50 mJ
85 m
PIN CONFIGURATION
SYMBOL
d
case
12 3
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDG
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Storage temperature
Junction Temperature
continuous
continuous
-
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
-
-
-
-
-
-
- 55
- 55
MAX.
30
30
15
13
8.2
52
25
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
- - 5 K/W
- 55 - K/W
August 1994
1
Rev 1.000




BUK573-48C pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
ID / A
100
RDS(ON) = VDS/ID
10
1 DC
BUK573-48C
tp =
10 us
100 us
1 ms
10 ms
100 ms
Self-clamped
0.1
1
10
VDS / V
100
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
ID / A
40
10
30
BUK5Y3-48C
VGS / V = 5
4.5
4
20
3.5
10 3
2.5
0
0 2 4 6 8 10
VDS / V
Fig.4. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
BUK5Y3-48C
0.5
2.5 3
3.5 VGS / V = 4
0.4
4.5
0.3
5
0.2
0.1
10
0
0
Fig.5.
10 20 30
VDS / V
40
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Zth j-hs / (K/W)
1E+01
ZTHX43
0.5
1E+00
0.2
0.1
0.05
1E-01 0.02
PD tp
D
=
tp
T
0
1E-02
1E-07
1E-05
1E-03
t/s
Tt
1E-01
1E+01
Fig.6. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
ID / A
40
BUK5Y3-48C
30
20
10 Tmb / degC =
150
25
-55
0
01234567
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V.
gfs / S
20
BUK5Y3-48C
15
10
5 Tmb / degC =
150
25
-55
0
0 10 20 30 40
Id / A
Fig.8. Typical transconductance.
gfs = f(ID); conditions: VDS = 25 V
August 1994
4
Rev 1.000

4페이지










BUK573-48C 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
1.0 (2x)
0.9
0.7
1.3
Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
August 1994
7
Rev 1.000

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BUK573-48C

PowerMOS transistor Clamped logic level FET

NXP Semiconductors
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