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PDF BUK573-60B Data sheet ( Hoja de datos )
| Número de pieza | BUK573-60B | |
| Descripción | PowerMOS transistor Logic level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK573-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic full-pack
envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
RDS(ON)
BUK573
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance;
VGS = 5 V
MAX.
-60A
60
13
25
0.085
MAX.
-60B
60
12
25
0.1
UNIT
V
A
W
Ω
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
-
Drain-gate voltage
RGS = 20 kΩ
Gate-source voltage
-
Non-repetitive gate-source voltage tp ≤ 50 µs
-
-
-
-
ID Drain current (DC)
Ths = 25 ˚C
ID Drain current (DC)
Ths = 100 ˚C
IDM Drain current (pulse peak value) Ths = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Ths = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
With heatsink
compound
MIN.
-
-
MAX.
60
60
15
20
-60A
13
8.2
52
-60B
12
7.6
48
25
150
150
UNIT
V
V
V
V
A
A
A
W
˚C
˚C
TYP.
-
55
MAX.
5
-
UNIT
K/W
K/W
February 1994
1
Rev 1.100
1 page  
Philips Semiconductors
PowerMOS transistor
Logic level FET
ID / A
1E-01
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
0 0.4 0.8 1.2 1.6 2 2.4
VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
C / pF
10000
BUK5y3-50
1000
100
Ciss
Coss
Crss
10
0 20 40
VDS / V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
VGS / V
12
BUK553-50
10
VDS / V =10
8
40
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 20 A; parameter VDS
Product Specification
BUK573-60A/B
IF / A
50
BUK553-50A
40
30
20
Tj / C = 150
25
10
0
012
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Ths / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Ths); conditions: ID = 20 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
February 1994
5
Rev 1.100
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUK573-60B.PDF ] | |
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