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PDF BUK581-60A Data sheet ( Hoja de datos )
| Número de pieza | BUK581-60A | |
| Descripción | PowerMOS transistor Logic level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK581-60A
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mount
applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
MAX.
60
1.5
1.5
150
0.40
PIN CONFIGURATION
4
SYMBOL
d
123
g
s
UNIT
V
A
W
˚C
Ω
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
-
RGS = 20 kΩ
-
Tamb = 25 ˚C
Tamb = 100 ˚C
Tamb = 25 ˚C
Tamb = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
15
1.5
1
6
1.5
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
From junction to solder point1
From junction to ambient
CONDITIONS
Mounted on any PCB .
Mounted on PCB of Fig.18
MIN.
-
-
TYP. MAX. UNIT
14 17 K/W
- 85 K/W
1 Temperature measured at solder joint on drain tab.
October 1995
1
Rev 1.100
1 page  
Philips Semiconductors
PowerMOS transistor
Logic level FET
VGS / V
10
BUK581-60A
9
VDS / V =12
48
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 1.5 A; parameter VDS
IF / A
5
BUK581-60A
4
Tj / C = 150
25
3
2
1
0
0 0.5 1 1.5
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Product Specification
BUK581-60A
WDSS%
120
Normalised Avalanche Energy
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Tamb/ C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tamb); conditions: ID = 1.5 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
October 1995
5
Rev 1.100
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUK581-60A.PDF ] | |
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