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PDF BUK582-100A Data sheet ( Hoja de datos )
| Número de pieza | BUK582-100A | |
| Descripción | PowerMOS transistor Logic level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK582-100A
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mount
applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
MAX.
100
1.7
1.8
150
0.31
PIN CONFIGURATION
4
SYMBOL
d
123
g
s
UNIT
V
A
W
˚C
Ω
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
-
RGS = 20 kΩ
-
Tamb = 25 ˚C
Tamb = 100 ˚C
Tamb = 25 ˚C
Tamb = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
15
1.7
1.1
6.8
1.8
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-b
Rth j-amb
PARAMETER
From junction to board1
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
MIN.
-
-
TYP. MAX. UNIT
40 - K/W
- 70 K/W
1 Temperature measured 1-3 mm from tab.
January 1998
1
Rev 1.100
1 page  
Philips Semiconductors
PowerMOS transistor
Logic level FET
VGS / V
12
BUK582-100A
11
10
9
8
7
6
VDS/ V = 20
80
5
4
3
2
1
0
0 5 10 15
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 1.7 A; parameter VDS
IF/ A
7
BUK582-100A
6
5
4
3
Tj/ C = 150
2
25
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSDS/ V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
Product Specification
BUK582-100A
WDSS%
120
Normalised Avalanche Energy
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140
Tamb/ C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tamb); conditions: ID = 1.7 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
January 1998
5
Rev 1.100
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUK582-100A.PDF ] | |
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