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부품번호 | BUK7227-100B 기능 |
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기능 | TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BUK7227-100B
TrenchMOS™ standard level FET
Rev. 01 — 26 January 2004
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 185 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V, 24 V and 42 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 145 mJ
s ID ≤ 48 A
s RDSon = 23 mΩ (typ)
s Ptot ≤ 167 W.
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
13
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s
Philips Semiconductors
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-mb) thermal resistance from junction to
mounting base
Conditions
Figure 4
5.1 Transient thermal impedance
BUK7227-100B
TrenchMOS™ standard level FET
Min Typ Max Unit
-
71.4 -
K/W
- - 0.95 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nk52
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12232
Product data
Rev. 01 — 26 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 12
4페이지 Philips Semiconductors
BUK7227-100B
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03no98
10-1
ID
(A)
10-2
10-3
10-4
10-5
03aa35
min typ
max
0
-60 10 80 150 220
Tj (°C)
10-6
0246
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
gfs
(S)
30
20
10
03nl25
3000
C
(pF)
2000
1000
Ciss
Coss
Crss
03nl30
0
0 20 40 ID (A) 60
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
0
10-1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 12232
Product data
Rev. 01 — 26 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK7227-100B | TrenchMOS standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |