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부품번호 | BUK7506-55A 기능 |
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기능 | TrenchMOS transistor Standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
Rev. 02 — 03 July 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7506-55A in SOT78 (TO-220AB)
BUK7606-55A in SOT404 (D2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s
Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
7.1 Transient thermal impedance
Value
60
50
Unit
K/W
K/W
0.5 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
10-2
0.02
Single Shot
10-3
10-6
10-5
10-4
10-3
10-2
03nf33
P
δ
=
tp
T
tp
T
10-1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08421
Product data
Rev. 02 — 03 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
4 of 15
4페이지 Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
03aa32
5
4.5
VGS(th)
(V) 4
3.5
max.
3
typ.
2.5
2 min
1.5
1
0.5
0
-60 -20 20 60 100 140 180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) 10-2
03aa35
10-3
10-4
min typ
max
10-5
10-6
012345
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
80
gfs
(S)
60
03nf26
40
20
0
0 20 40 60 80 100
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
C 9000
(pF)
8000
7000
6000
5000
4000
3000
2000
1000
0
10-2
10-1
1
03nf31
Ciss
Coss
Crss
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08421
Product data
Rev. 02 — 03 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
7 of 15
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구 성 | 총 15 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK7506-55A | TrenchMOS transistor Standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |