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What is BUK7508-55?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "TrenchMOS transistor Standard level FET".


BUK7508-55 Datasheet PDF - NXP Semiconductors

Part Number BUK7508-55
Description TrenchMOS transistor Standard level FET
Manufacturers NXP Semiconductors　
Logo NXP Semiconductors Logo　


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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7508-55
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
75
187
175
8
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
75
65
240
187
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
60
MAX.
0.8
-
UNIT
K/W
K/W
February 1997
1
Rev 1.000

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BUK7508-55 equivalent
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7508-55
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ
98%
1E-04
1E-05
1E-06
01234
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
5
7
6
5
4 Ciss
3
2
1
0
0.01 0.1
1 VDS/V
10
Coss
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
12
VGS/V
10
8
BUK7508-55
VDS = 14V
VDS = 44V
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
QG/nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
100
IF/A
80
60
Tj/C = 175
25
40
20
0
0 0.2 0.4 0.6 0.8 1 1.2
VSDS/V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
February 1997
5
Rev 1.000


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Part Details

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