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부품번호 | BUK7515-100A 기능 |
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기능 | TrenchMOS transistor Standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 7 페이지수
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7515-100A
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general purpose switching
applications.
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
100
75
230
175
15
PIN CONFIGURATION
SYMBOL
d
tab
1 23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
20
75
53
240
230
175
TYP.
-
60
MAX.
0.65
-
UNIT
V
A
W
˚C
mΩ
UNIT
V
V
V
A
A
A
W
˚C
UNIT
K/W
K/W
December 1998
1
Rev 1.100
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7515-100A
RDS(ON)/mOhm
16
15
14
13
12
11
10
5
10 VGS/V
15
20
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(VGS); conditions ID = 25 A;
100
ID/A
80
60
40
Tj/C = 175
25
20
0
0 1 2 3 VGS/V 4 5 6 7
Fig.8. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
90
gfs/S
80
70
60
50
40
30
20
10
0
0 20 40 ID/A 60 80 100
Fig.9. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
3a
Rds(on) normalised to 25degC
2.5
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.10. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0 50
Tj / C
100 150 200
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ
98%
1E-04
1E-05
1E-06
01234
Fig.12. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
5
December 1998
4
Rev 1.100
4페이지 Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7515-100A
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
7
Rev 1.100
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK7515-100A | TrenchMOS transistor Standard level FET | NXP Semiconductors |
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