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부품번호 | BUK7520-55 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BUK7520-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 15 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 48 A; Vsup ≤ 55 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C;
unclamped
Min Typ Max Unit
- - 55 V
- - 54 A
- - 118 W
- - 40 mΩ
- 17 20 mΩ
- - 115 mJ
NXP Semiconductors
BUK7520-55A
N-channel TrenchMOS standard level FET
103
ID
(A)
102
RDSon = VDS/ID
10 P
tp
δ=
T
tp
T
t
1
1
03nc66
D.C.
10
VDS (V)
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7520-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BUK7520-55A
N-channel TrenchMOS standard level FET
ID 200
(A) 180
160
140
03nc63
VGS (V) =
20
14
12
11
10
120 9.0
100 8.5
8.0
80 7.5
7.0
60
6.5
40 6.0
20 5.5
5.0
0 4.5
0 2 4 6 8 10
VDS (V)
30
RDSon
(mΩ)
25
03nc62
20
15
10
5
10 15 20 25
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
10−1
ID
(A)
10−2
03aa35
min typ max
25
gfs
(S)
20
03nc60
10−3
15
10−4
10
10−5
5
10−6
0246
VGS (V)
0
0 20 40 60 80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7520-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
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BUK7520-55 | N-channel TrenchMOS standard level FET | NXP Semiconductors |
BUK7520-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
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