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부품번호 | BUK7575-55 기능 |
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기능 | TrenchMOS transistor Standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 8 페이지수
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7575-55
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
19.7
61
175
75
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
19.7
13.9
79
61
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
60
MAX.
2.46
-
UNIT
K/W
K/W
April 1998 1 Rev 1.100
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7575-55
50
ID/A
40
30
16 14 12
VGS/V =
10.0
9.5
9.0
8.5
8.0
7.5
7.0
20 6.5
6.0
10 5.5
5.0
4.5
0 4.0
0 2 4 VDS/V 6 8 10
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
120 RDS(ON)/mOhm
VGS/V =
110
100
90
80
70
6
6.5
7
8
9 10
60
50
0
Fig.6.
5 10 ID/A 15 20 25 30
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
25
ID/A
20
15
10
5
Tj/C = 175
25
0
0123456789
VGS/V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
9
gfs/S
8
7
6
5
4
3
2
0 5 10 ID/A 15 20 25
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5 a
BUK959-60 Rds(on) normlised to 25degC
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1998 4 Rev 1.100
4페이지 Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
3,7
2,8
1,3
3,0 max
not tinned
1,3
max 1 2 3
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
Product specification
BUK7575-55
4,5
max
5,9
min
15,8
max
0,6
2,4
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
April 1998 7 Rev 1.100
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
BUK7575-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
BUK7575-55 | TrenchMOS transistor Standard level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |