|
|
PDF BUK7610-100B Data sheet ( Hoja de datos )
| Número de pieza | BUK7610-100B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUK7610-100B (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
• Low conduction losses due to low on-state resistance
• Q101 compliant
• Suitable for standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
• 12 V, 24 V and 42 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11; Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 80 V;
Tj = 25 °C; Fig. 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 75 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1]
Min Typ Max Unit
- - 100 V
- - 75 A
- - 300 W
-
8.6 10
mΩ
- 22 - nC
- - 629 mJ
Scan or click this QR code to view the latest information for this product
1 page  
NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13
QGD gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 14
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
LD
internal drain
from drain lead 6 mm from package to
inductance
centre of die ; Tj = 25 °C
from upper edge of drain mounting
base to centre of die ; Tj = 25 °C
LS
BUK7610-100B
internal source
inductance
from source lead to source bond pad ;
Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
Min Typ Max Unit
100 - - V
89 - - V
1- - V
234V
- - 4.4 V
-
0.02 1
µA
- - 500 µA
- 2 100 nA
- 2 100 nA
-
8.6 10
mΩ
- - 25 mΩ
- 80 - nC
- 18 - nC
- 22 - nC
- 5080 6773 pF
- 677 812 pF
- 168 230 pF
- 33 - ns
- 45 - ns
- 120 - ns
- 36 - ns
- 4.5 - nH
- 2.5 - nH
- 7.5 - nH
© NXP B.V. 2012. All rights reserved
5 / 12
5 Page 
NXP Semiconductors
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BUK7610-100B
N-channel TrenchMOS standard level FET
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
11 / 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BUK7610-100B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUK7610-100B | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |