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부품번호 | BUK7618-55 기능 |
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기능 | N-channel TrenchMOS standard level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
BUK7618-55
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 50 A; Vsup ≤ 25 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 57 A
- - 125 W
- 15 18 mΩ
- - 125 mJ
NXP Semiconductors
BUK7618-55
N-channel TrenchMOS standard level FET
103
IDM
(A)
102
RDS(on) = VDS / ID
10 D.C.
003aaf192
tp = 1 μs
10 μs
100 μs
1 ms
10 ms
100 ms
120
WDSS
(%)
80
40
003aaf204
1
1 10 102
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
0
20 60 100 140 180
T(mb) (°C)
ID = 75 A
Fig 4. Normalised drain-source avalanche energy as a
function of mounting-base temperature.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
minimum footprint; FR4 board
Min Typ Max Unit
- - 1.2 K/W
- 50 - K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
10−1
0.1
0.05
0.02
003aaf193
P
tp
δ=
T
10−2 0
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
t
1 10
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7618-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
BUK7618-55
N-channel TrenchMOS standard level FET
10−1
ID
(A)
10−2
003aaf200
10−3
10−4
2 % typical 98 %
10−5
10−6
012345
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
12
VGS
(V)
8
4
003aaf202
VDS = 14 V
VDS = 44 V
0
0 10 20 30 40
QG (nC)
Tj = 25 °C; ID = 50 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
3
C
(nF)
Ciss
Coss
2
Crss
1
003aaf201
0
10−2
10−1
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
IF
(A)
80
003aaf203
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0 0.4 0.8 1.2
VSDS (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK7618-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK7618-55 | N-channel TrenchMOS standard level FET | NXP Semiconductors |
BUK7618-55 | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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