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BUK7618-55 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK7618-55은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BUK7618-55 기능
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


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BUK7618-55 데이터시트, 핀배열, 회로
BUK7618-55
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
ID = 50 A; Vsup 25 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 57 A
- - 125 W
- 15 18 m
- - 125 mJ




BUK7618-55 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BUK7618-55
N-channel TrenchMOS standard level FET
103
IDM
(A)
102
RDS(on) = VDS / ID
10 D.C.
003aaf192
tp = 1 μs
10 μs
100 μs
1 ms
10 ms
100 ms
120
WDSS
(%)
80
40
003aaf204
1
1 10 102
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
0
20 60 100 140 180
T(mb) (°C)
ID = 75 A
Fig 4. Normalised drain-source avalanche energy as a
function of mounting-base temperature.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
minimum footprint; FR4 board
Min Typ Max Unit
- - 1.2 K/W
- 50 - K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
101
0.1
0.05
0.02
003aaf193
P
tp
δ=
T
102 0
103
106
105
104
103
102
tp
T
101
t
1 10
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7618-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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BUK7618-55 전자부품, 판매, 대치품
NXP Semiconductors
BUK7618-55
N-channel TrenchMOS standard level FET
101
ID
(A)
102
003aaf200
103
104
2 % typical 98 %
105
106
012345
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
12
VGS
(V)
8
4
003aaf202
VDS = 14 V
VDS = 44 V
0
0 10 20 30 40
QG (nC)
Tj = 25 °C; ID = 50 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
3
C
(nF)
Ciss
Coss
2
Crss
1
003aaf201
0
102
101
1
10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
IF
(A)
80
003aaf203
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0 0.4 0.8 1.2
VSDS (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK7618-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 April 2011
© NXP B.V. 2011. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK7618-55

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors
BUK7618-55

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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