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BUK7635-55 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7635-55
기능 TrenchMOS transistor Standard level FET
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BUK7635-55 데이터시트, 핀배열, 회로
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
BUK7635-55
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
trench’ technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
34
85
175
35
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
UNIT
V
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
34
24
136
85
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
50
MAX.
1.75
-
UNIT
K/W
K/W
April 1998 1 Rev 1.100




BUK7635-55 pdf, 반도체, 판매, 대치품
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
BUK7635-55
100
ID/A
80
16
14
12
VGS/V =
10.0
9.5
9.0
8.5
60
8.0
7.5
40 7.0
6.5
20 6.0
5.5
5.0
0 4.5
0 2 4 VDS/V 6 8 10 4.0
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
65 RD(ON)/mOhm
VGS/V =
6
60
55 6.5 7
50
45 8
40
9
35 10
30
25
0
Fig.6.
10 20 30 ID/A 40 50 60 70
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
70
ID/A
60
50
40
30
20
10
Tj/C = 175
25
0
0 2 4 VGS/V 6
8 10 12
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
16
gfs/S
14
12
10
8
6
4
2
0 10 20 30 ID/A 40 50 60 70
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5 a
BUK959-60 Rds(on) normlised to 25degC
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1998 4 Rev 1.100

4페이지










BUK7635-55 전자부품, 판매, 대치품
Philips Semiconductors
TrenchMOStransistor
Standard level FET
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
4.5 max
1.4 max
11 max
15.4
Product specification
BUK7635-55
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.18. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.19. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
April 1998 7 Rev 1.100

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부품번호상세설명 및 기능제조사
BUK7635-55

TrenchMOS transistor Standard level FET

NXP
NXP
BUK7635-55

TrenchMOS transistor Standard level FET

NXP
NXP

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