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PDF BUK7830-30 Data sheet ( Hoja de datos )
| Número de pieza | BUK7830-30 | |
| Descripción | TrenchMOS transistor Standard level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7830-30
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology, the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC) Tsp = 25 ˚C
Drain current (DC) Tamb = 25 ˚C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
g
MAX.
30
12.8
5.9
8.3
150
30
d
s
UNIT
V
A
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 100 ˚C
Tamb = 100 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.19
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
TYP.
12
-
MAX.
30
30
16
12.8
5.9
9
4.1
51.2
23.6
8.3
1.8
150
MAX.
15
70
UNIT
V
V
V
A
A
A
A
A
A
W
W
˚C
UNIT
K/W
K/W
December 1997
1
Rev 1.100
1 page  
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7830-30
ID / A
60
50
40
7830-30
Tj / C = 25
150
30
20
10
0
0 2 4 6 8 10
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S
15
7830-30
10 Tj / C = 25
150
5
0
0 10 20 30 40 50 60
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
a
2
SOT223 30V Trench Normalised RDS(ON) = f(Tj)
1.5
1
0.5
0
-50 0
50 100 150
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.2 A; VGS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
-0100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ
98%
1E-04
1E-05
1E-06
01234
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
5
C / pF
10000
7528-30
1000
Ciss
Coss
100
0.1
1 10
VDS / V
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
December 1997
5
Rev 1.100
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUK7830-30.PDF ] | |
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