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BUK7830-30 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7830-30
기능 TrenchMOS transistor Standard level FET
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BUK7830-30 데이터시트, 핀배열, 회로
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
BUK7830-30
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
trench’ technology, the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC) Tsp = 25 ˚C
Drain current (DC) Tamb = 25 ˚C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
g
MAX.
30
12.8
5.9
8.3
150
30
d
s
UNIT
V
A
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 100 ˚C
Tamb = 100 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
Tsp = 25 ˚C
Tamb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-sp
Rth j-amb
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.19
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
TYP.
12
-
MAX.
30
30
16
12.8
5.9
9
4.1
51.2
23.6
8.3
1.8
150
MAX.
15
70
UNIT
V
V
V
A
A
A
A
A
A
W
W
˚C
UNIT
K/W
K/W
December 1997
1
Rev 1.100




BUK7830-30 pdf, 반도체, 판매, 대치품
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
BUK7830-30
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100PD/PD 25 ˚C = f(Tmb)
ID%
120
110
100
90
Normalised Current Derating
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100ID/ID 25 ˚C = f(Tmb); conditions: VGS 10 V
ID / A
100
10 RDS(ON) = VDS / ID
1
DC
0.1
7830-30
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
0.1
1 10 100 1000
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth j-amb / (K/W)
1E+02
D=
0.5
BUKX83
0.2
1E+01
0.1
0.05
0.02
1E+00
P
D
tp
D = tp
T
1E-01
0
1E-02
1E-07
1E-05
1E-03 1E-01
t/s
t
T
1E+01 1E+03
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
ID / A
60 12
50
10
BUK7830-30
8
VGS / V =
40
6.5
30
6
20 5.5
10 5
4.5
4
0
0 2 4 6 8 10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / mOhm
66
5
6.5
7830-30
8
4 10
3
12
2
VGS / V =
1
0
0 10 20 30 40 50 60
ID / A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
December 1997
4
Rev 1.100

4페이지










BUK7830-30 전자부품, 판매, 대치품
Philips Semiconductors
TrenchMOStransistor
Standard level FET
MOUNTING INSTRUCTIONS
1.5
min
3.8
min
Product specification
BUK7830-30
Dimensions in mm.
1.5
min
(3x)
1.5
min
2.3
4.6
6.3
Fig.18. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
December 1997
7
Rev 1.100

7페이지



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부품번호상세설명 및 기능제조사
BUK7830-30

TrenchMOS transistor Standard level FET

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