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BUK7880-55 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7880-55
기능 TrenchMOS transistor Standard level FET
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BUK7880-55 데이터시트, 핀배열, 회로
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
BUK7880-55
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’trench’ technolgy
the device features very low on-state
resistance and has integral zener
diodes giving ESD protection. It is
intended for use in automotive and
general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
MAX.
55
7.5
1.8
150
80
PINNING - SOT223
PIN DESCRIPTION
1 gate
2 drain
3 source
4 drain (tab)
PIN CONFIGURATION
4
123
SYMBOL
d
g
s
UNIT
V
A
W
˚C
m
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
ID
IDM
Ptot
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Total power dissipation
Storage & operating temperature
-
RGS = 20 k
-
Tsp = 25 ˚C
On PCB in Fig.2
Tamb = 25 ˚C
On PCB in Fig.2
Tamb = 100 ˚C
Tsp = 25 ˚C
Tsp = 25 ˚C
On PCB in Fig.2
Tamb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k)
MIN.
-
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
7.5
3.5
2.2
40
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
W
W
˚C
MIN.
-
MAX.
2
UNIT
kV
April 1998 1 Rev 1.100




BUK7880-55 pdf, 반도체, 판매, 대치품
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
BUK7880-55
40
ID/A
30
16
12
10
9.5
9.0
8.5
8.0
7.5
20
7.0
6.5
10 6.0
5.5
5.0
4.5
0
0
2
4 VDS/V 6
8 10 4.0
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
130 RDS(ON)/mOhm
120 6
110 6.5
7
100
8
90 9
10
80
70
60
0
Fig.6.
5 10 ID/A 15 20 25 30
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
20
ID/A
15
10
5
Tj/C =
150
25
0
0123456789
VGS/V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
9
gfs/S
8
7
6
5
4
3
2
0
5
10 ID/A
15
20
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5 a
BUK98XX-55
Rds(on) normalised to 25degC
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK78xx-55
1
0
-100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1998 4 Rev 1.100

4페이지










BUK7880-55 전자부품, 판매, 대치품
Philips Semiconductors
TrenchMOStransistor
Standard level FET
PRINTED CIRCUIT BOARD
36
60
4.6
9
10
18
4.5
Product specification
BUK7880-55
Dimensions in mm.
7
15
50
Fig.18. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
April 1998 7 Rev 1.100

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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부품번호상세설명 및 기능제조사
BUK7880-55

TrenchMOS transistor Standard level FET

NXP
NXP
BUK7880-55

TrenchMOS transistor Standard level FET

NXP
NXP

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