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PDF BUK856-400IZ Data sheet ( Hoja de datos )
| Número de pieza | BUK856-400IZ | |
| Descripción | Insulated Gate Bipolar Transistor Protected Logic-Level IGBT | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
Product specification
BUK856-400 IZ
GENERAL DESCRIPTION
Protected N-channel logic-level
insulated gate bipolar power
transistor in a plastic envelope,
intended for automotive ignition
applications. The device has
built-in zener diodes providing
active collector voltage clamping
and ESD protection up to 2 kV.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V(CL)CER
VCEsat
IC
Ptot
ECERS
Collector-emitter clamp voltage 350 400 500 V
Collector-emitter on-state voltage
2.2 V
Collector current (DC)
20 A
Total power dissipation
100 W
Clamped energy dissipation
300 mJ
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
g
c
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCE
VCE
±VGE
IC
IC
ICM
ICLM
ECERS
ECERR1
EECR1
Ptot
Tstg
Tj
Collecter-emitter voltage
tp ≤ 500 µs
Collector-emitter voltage
Continuous
Gate-emitter voltage
-
Collector current (DC)
Tmb = 100 ˚C
Collector current (DC)
Tmb = 25 ˚C
Collector current (pulsed peak value, Tmb = 25 ˚C; tp ≤ 10 ms;
on-state)
VCE ≤ 15 V
Collector current (clamped inductive 1 kΩ ≤ RG ≤ 10 kΩ
load)
Clamped turn-off energy
(non-repetitive)
Tmb = 25 ˚C; IC = 10 A; RG = 1 kΩ;
see Figs. 23,24
Clamped turn-off energy (repetitive) Tmb = 100 ˚C; IC = 8 A; RG = 1 kΩ;
f = 50 Hz
Reverse avalanche energy
(repetitive)
IE = 1 A; f = 50 Hz
Total power dissipation
Storage temperature
Tmb = 25 ˚C
-
Operating Junction Temperature -
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
-20
-
-
-
-
-
-
-
-
-
-55
-40
MIN.
-
MAX.
500
50
12
10
20
25
10
300
125
5
125
150
150
MAX.
2
UNIT
V
V
V
A
A
A
A
mJ
mJ
mJ
W
˚C
˚C
UNIT
kV
1 This applies to short-term operation in ignition circuits with open-secondary ignition coil.
December 1996
1
Rev. 1.200
1 page  
Philips Semiconductors
Insulated Gate Bipolar Transistor
Protected Logic-Level IGBT
Product specification
BUK856-400 IZ
IC / A
1E-01
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2 % typ 98 %
1E-04
1E-05
1E-06
0 0.4 0.8 1.2 1.6 2 2.4
VGE / V
Fig.13. Sub-threshold collector current
IC = f(VGE); Tj = 25˚C; VCE = VGE
VGE / V
6
PMG35A
5
Vcc / V = 12
4
300
3
2
1
0
0 10 20 30
Qg / nC
Fig.14. Typical Turn-on Gate Charge Characteristics
VGE = f(QG); conditions: IC = 8 A.
C / pf
10000
pmg35a
1000
Cies
100
Coes
10
0.01
0.1
1 10
VCE / V
Cres
100 1000
Fig.15. Typical Capacitances Cies, Coes, Cres
C = f(VCE); conditions: VGE = 0 V; f = 1 MHz
100 t / us, E / mJ
td(off)
10
PMG35A
E(off)
tf
1
01 23 45
Rg / kOhm
Fig.16. Typical Switching Characteristics vs. RG
conditions: Tj=125 ˚C; IC=8 A; VCL=300 V; LC=5 mH.
t / us, E / mJ
15
td(off)
10
E(off)
PMG35A
5
tf
0
0 50 100 150
Tj / C
Fig.17. Typical Switching Characteristics vs. Tj
conditions: IC=8 A; VCL=300 V; RG=1 kΩ; LC=5 mH.
t / us, E / mJ
15
td(off)
PMG35A
10
tf
5
E(off)
0
02
46
IC / A
8 10
Fig.18. Typical Switching Characteristics vs. IC
conditions: Tj=125 ˚C VCL=300 V; RG=1 kΩ; LC=5 mH.
December 1996
5
Rev. 1.200
5 Page | ||
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| PDF Descargar | [ Datasheet BUK856-400IZ.PDF ] | |
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