|
|
|
부품번호 | BUK856-800A 기능 |
|
|
기능 | Insulated Gate Bipolar Transistor IGBT | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 7 페이지수
Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK856-800A
GENERAL DESCRIPTION
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCE
IC
Ptot
VCEsat
Eoff
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off energy Loss
MAX.
800
24
125
3.5
1.0
UNIT
V
A
W
V
mJ
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
g
c
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VCE
VCGR
±VGE
IC
IC
ICLM
ICM
Ptot
Tstg
Tj
Collector-emitter voltage
-
Collector-gate voltage
Gate-emitter voltage
RGE = 20 kΩ
-
Collector current (DC)
Tmb = 25 ˚C
Collector current (DC)
Tmb = 100 ˚C
Collector Current (Clamped
Tj ≤ Tjmax.
Inductive Load)
VCL ≤ 500 V
Collector current (pulsed peak value, Tj ≤ Tjmax.
on-state)
Total power dissipation
Storage temperature
Tmb = 25 ˚C
-
Junction Temperature
-
-5
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
In free air
TYP.
-
60
MAX.
800
800
30
24
12
40
50
125
150
150
MAX.
1.0
-
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
March 1993
1
Rev 1.000
Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK856-800A
15 gfe / S
BUK8Y6-800A
10
5
0
0 10 20 30 40 50
IC / A
Fig.7. Typical transconductance, Tj = 25 ˚C.
gfe = f(IC); conditions: VCE = 15 V
VGE / V
16
BUK8Y6-800A
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60
QG / nC
Fig.8. Typical turn-on gate-charge characteristics.
VGE = f(QG); conditions: IC = 12 A; parameter VCE
t / ns
600
BUK8Y6-800A
500
400
300
td(off)
200 tf
100
0
0 20 40 60 80 100 120 140
Tj / C
Fig.9. Typical Switching Times vs. Tj
conditions: IC = 12 A; VCL = 500 V; RG = 25 Ω
C / pF
10000
BUK8Y6-800A
1000
Cies
100
Coes
Cres
10
0 10 20 30 40
VDS / V
Fig.10. Typical capacitances, Cies, Coes, Cres.
C = f(VCE); conditions: VGE = 0 V; f = 1MHz.
dVCE/dt (V/ns)
15
BUK8Y6-800A
10
5
0
1 10 100 1000
Rg / Ohm
Fig.11. Typical turn-off dVCE/dt vs. RG
conditions: IC = 12 A; VCL = 500 V; Tj = 125 ˚C
E / mJ
1.5
BUK8Y6-800A
1
E(on)
0.5 E(off)
0
0 20 40 60 80 100 120 140
Tj / C
Fig.12. Typical Switching losses vs. Tj
conditions: IC = 12 A; VCL = 500 V; RG = 25 Ω
March 1993
4
Rev 1.000
4페이지 Philips Semiconductors
Insulated Gate Bipolar Transistor (IGBT)
Product Specification
BUK856-800A
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1993
7
Rev 1.000
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ BUK856-800A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUK856-800 | Insulated Gate Bipolar Transistor IGBT | NXP Semiconductors |
BUK856-800A | Insulated Gate Bipolar Transistor IGBT | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |