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PDF BUK9120-48TC Data sheet ( Hoja de datos )
| Número de pieza | BUK9120-48TC | |
| Descripción | PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes | |
| Fabricantes | NXP Semiconductors | |
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Philips Semiconductors
PowerMOS transistor
Voltage clamped logic level FET
with temperature sensing diodes
Product specification
BUK9120-48TC
GENERAL DESCRIPTION
Protected N-channel enhancement
mode logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV and active
drain voltage clamping. Temperature
sensitive diodes are incorporated for
monitoring chip temperature.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MIN. TYP. MAX. UNIT
V(CL)DSR
ID
Ptot
Tj
RDS(ON)
VF
-SF
Drain-source clamp voltage
40 45 55 V
Drain current (DC)
52 A
Total power dissipation
116 W
Junction temperature
175 ˚C
Drain-source on-state
20 mΩ
resistance; VGS = 5 V
Forward voltage,temperature 685 710 735 mV
sense diodes
Negative temperature
1.26 1.4 1.54 mV/K
coefficient, temperature sense
diodes
PINNING - SOT426
PIN DESCRIPTION
1 gate
2 T1
3 (connected to mb)
4 T2
5 source
mb drain
PIN CONFIGURATION
mb
3
12 45
Fig. 1.
SYMBOL
d
T1
g
s
Fig. 2.
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDG
±VGS
ID
ID
ID
IDM
Ptot
IGD
IGS
VTS
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Drain-gate clamp current
Gate-source clamp current
Source T1/T2 voltage
Storage temperature
Junction temperature
continuous
continuous
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 140 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
5ms pulse; ∆ = 0.01
5ms pulse; ∆ = 0.01
-
-
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
- 55
MAX.
40
38
10
52
37
25
208
116
50
50
±100
175
175
UNIT
V
V
V
A
A
A
A
W
mA
mA
V
˚C
˚C
February 1998
1
Rev 1.100
1 page  
Philips Semiconductors
Product specification
PowerMOS transistor
BUK9120-48TC
Voltage clamped logic level FET with temperature sensing diodes
100
ID/A
80
60
40
20
Tj/C = 175
25
0
0 1 2 VGS/V 3 4 5 6
Fig.9. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
50
gfs/S
40
30
20
10
0
0 20 40 ID/A 60 80 100
Fig.10. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
48 V(CL)DSR/V
47
46
45
44
43
Tmb / degC =
42 175
25
41 -55
40
0
2
4
6 ID/A 8
10 12
Fig.11. Typical clamping voltage
V(CL)DSR = f(ID); conditions: RG = 10 kOhm
V(CL)DSR/V
50
49
48
Tmb / degC =
175
25
-55
47
46
45
44
43
0 5 RG/kOhm 10
Fig.12. Typical clamping voltage
V(CL)DSR = f(RG); conditions: ID = 10 A
15
0.9
Vf/V
0.8
0.7
If/uA =
0.6
500
0.5 250
100
0.4 50
25
0.3
-50
0
50 100 150 200
Diode Temperature /C
Fig.13. Typical Vf of sense diodes
Vf = f(K); parameter If
-1.25 Vf Temperature Coefficient / mV/K
-1.3
-1.35
-1.4
-1.45
-1.5
-1.55
0
50 100
Diode Temperature /C
150
Fig.14. Typical Vf temperature coefficient
Vf Temp.Coef.= f(K); conditions: IF = 250 uA
February 1998
5
Rev 1.100
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUK9120-48TC.PDF ] | |
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