BUK9506-55A Datasheet PDF - NXP Semiconductors
| Part Number | BUK9506-55A | |
| Description | TrenchMOS transistor Logic level FET | |
| Manufacturers | NXP Semiconductors | |
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There is a preview and BUK9506-55A download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9506-55A
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology which features very low
on-state resistance. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
VGS = 10 V
MAX.
55
75
230
175
6.3
5.8
PIN CONFIGURATION
SYMBOL
d
tab
1 23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
-
RGS = 20 kΩ
-
tp≤50µS
ID
ID
IDM
Ptot
Tstg, Tj
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
15
75
75
240
230
175
TYP.
-
60
MAX.
0.65
-
UNIT
V
A
W
˚C
mΩ
mΩ
UNIT
V
V
V
V
A
A
A
W
˚C
UNIT
K/W
K/W
December 1998
1
Rev 1.100
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Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9506-55A
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
BUK959-60
0.5
0
-100
-50
0 50
Tj / C
100 150 200
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2% typ 98%
1E-04
1E-05
1E-05
0 0.5 1 1.5 2 2.5
Fig.12. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
3
20
15
10
Ciss
5
0
0.01 0.1
1 VDS/V 10
Coss
Crss
100
Fig.13. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
6
VGS/V
5
4
VDS =
14V
3
44V
2
1
0
0 20 40 60 80 100 120
QG/nC
Fig.14. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
100
IF/A
80
60
Tj/C =
175
25
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSDS/V
Fig.15. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.16. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
December 1998
5
Rev 1.100
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUK9506-55A electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUK9506-55A.PDF Datasheet ] | |
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