|
|
|
부품번호 | BUK9510-100B 기능 |
|
|
기능 | TrenchMOS logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
BUK95/9610-100B
TrenchMOS™ logic level FET
Rev. 02 — 8 October 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
Product availability:
BUK9510-100B in SOT78 (TO-220AB)
BUK9610-100B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V, 24 V, and 42 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 629 mJ
s ID ≤ 75 A
s RDSon = 8.6 mΩ (typ)
s Ptot ≤ 300 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
Rth(j-a)
thermal resistance from junction to ambient
SOT78
vertical in still air
SOT404
mounted on a printed circuit board;
minimum footprint
4.1 Transient thermal impedance
Min Typ Max Unit
- - 0.5 K/W
- 60 - K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
10-1
10-2
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03ng69
P
δ
=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 10282
Product data
Rev. 02 — 8 October 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
4 of 15
4페이지 Philips Semiconductors
BUK95/9610-100B
TrenchMOS™ logic level FET
300
ID
(A)
250
200
10
5
03ng65
4
10
RDSon
(mΩ)
9
03ng64
150
VGS = 3 V
100 8
50
0 2.2
0 2 4 6 8 10
VDS (V)
7
0 5 10 15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
15
RDSon
(mΩ)
14
13
03ng66
VGS = 3 V 3.2 3.4 3.6 4 5 10
2.5
a
2
03ng41
12 1.5
11
1
10
0.5
9
8
0 50 100 150 200 250 300
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (ºC)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 10282
Product data
Rev. 02 — 8 October 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7 of 15
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ BUK9510-100B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUK9510-100B | TrenchMOS logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |