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부품번호 | BUK9575-55 기능 |
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기능 | TrenchMOS transistor Logic level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 8 페이지수
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9575-55
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
MAX.
55
19.7
61
175
75
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
19.7
13.9
79
61
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
60
MAX.
2.46
-
UNIT
K/W
K/W
April 1998 1 Rev 1.100
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9575-55
50
ID/A
10.0 8.0 VGS/V =
6.0
40 5.4
5.0
4.8
4.6
30 4.4
4.2
4.0
20
3.8
3.6
3.4
3.2
10 3.0
2.8
2.6
2.4
0
0
2
4 VDS/V 6
2.2
8 10 2.0
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
90 RDS(ON)/mOhm
VGS/V =
85
80
75
4 4.2
4.4
4.6 5
4.8
70
65
60
55
5
Fig.6.
10 15 ID/A 20 25
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
25
ID/A
20
15
10
5
Tj/C =
175
25
0
012345
VGS/V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Transconductance, gfs (S)
15
14
13
12
11
10
9
8
7
6
5 0 5 10 15 20 25
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5 a
BUK959-60 Rds(on) normlised to 25degC
2
1.5
1
0.5
-100
-50
0 50 100 150 200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 5 V
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
BUK959-60
0.5
0
-100
-50
0 50
Tj / C
100 150 200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1998 4 Rev 1.100
4페이지 Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
3,7
2,8
1,3
3,0 max
not tinned
1,3
max 1 2 3
(2x)
3,0
13,5
min
0,9 max (3x)
2,54 2,54
Product specification
BUK9575-55
4,5
max
5,9
min
15,8
max
0,6
2,4
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
April 1998 7 Rev 1.100
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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BUK9575-55 | TrenchMOS transistor Logic level FET | NXP Semiconductors |
BUK9575-55 | TrenchMOS transistor Logic level FET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |