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PDF BUK9629-100B Data sheet ( Hoja de datos )
| Número de pieza | BUK9629-100B | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9629-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 9 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 6;
see Figure 7
Min Typ Max Unit
- - 100 V
- - 46 A
- - 157 W
- 22 27 mΩ
- 24 29 mΩ
1 page  
NXP Semiconductors
BUK9629-100B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 5
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 5
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 5
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 6; see Figure 7
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 6; see Figure 7
ID = 25 A; VDS = 80 V; VGS = 5 V;
Tj = 25 °C; see Figure 8
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 9
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
from upper edge of drain mounting base
to centre of die; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
Min Typ Max Unit
100 -
89 -
1.1 1.5
-
-
2
V
V
V
- - 2.3 V
0.5 - - V
- - 500 µA
-
0.02 1
µA
- 2 100 nA
- 2 100 nA
- - 32 mΩ
- - 75 mΩ
- 22 27 mΩ
- 24 29 mΩ
- 33 - nC
- 7 - nC
- 13 - nC
- 3270 4360 pF
- 236 283 pF
- 103 141 pF
- 30 - ns
- 86 - ns
- 96 - ns
- 46 - ns
- 2.5 - nH
- 4.5 - nH
- 7.5 - nH
BUK9629-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BUK9629-100B
N-channel TrenchMOS logic level FET
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK9629-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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