BUK9635-100A Datasheet PDF - NXP Semiconductors
| Part Number | BUK9635-100A | |
| Description | TrenchMOS transistor Logic level FET | |
| Manufacturers | NXP Semiconductors | |
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Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9635-100A
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’trench’ technology
the device features very low on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
(no connection possible)
3 source
mb drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
VGS = 10 V
MAX.
100
40
150
175
35
34
PIN CONFIGURATION
SYMBOL
d
mb
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non Repetive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
100
100
10
15
40
29
133
150
175
TYP.
-
50
MAX.
1.01
-
UNIT
V
A
W
˚C
mΩ
mΩ
UNIT
V
V
V
V
A
A
A
W
˚C
UNIT
K/W
K/W
August 1999
1
Rev 1.000
|
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Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9635-100A
7
6
5
4
3
Ciss
2
1
0
0.01 0.1 1 10
VDS/V
Coss
Crss
100
Fig.13. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
6
VGS / V
5
4
3
VDS = 14V
VDS = 44V
2
1
0
0 10 QG / nC 20 30 40
Fig.14. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 25 A; parameter VDS
100
80
60
Tj/C=
175
40
25
20
0
0.0 0.5 1.0 1.5
Fig.15. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.16. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.17. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
+ VDD
RD
VGS
0
VDS
-
RG T.U.T.
Fig.18. Switching test circuit.
August 1999
5
Rev 1.000
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUK9635-100A electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUK9635-100A.PDF Datasheet ] | |
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