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부품번호 | BUL146 기능 |
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기능 | POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS | ||
제조업체 | Motorola Inc | ||
로고 | |||
전체 10 페이지수
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL146/D
™Designer's Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
BUL146*
BUL146F*
*Motorola Preferred Device
The BUL146/BUL146F have an applications specific state–of–the–art die designed
for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high voltage/high speed
transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125°C
• Parametric Distributions are Tight and Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL146F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
POWER TRANSISTOR
6.0 AMPERES
700 VOLTS
40 and 100 WATTS
MAXIMUM RATINGS
Rating
Symbol BUL146 BUL146F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
Operating and Storage Temperature
TJ, Tstg
THERMAL CHARACTERISTICS
Rating
Symbol
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
400
700
9.0
6.0
15
4.0
8.0
— 4500
— 3500
— 1500
100 40
0.8 0.32
– 65 to 150
BUL44 BUL44F
1.25 3.125
62.5 62.5
260
Vdc
Vdc
Vdc
Adc
Adc
V
Watts
W/°C
°C
Unit
°C/W
°C
BUL146
CASE 221A–06
TO–220AB
BUL146F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
ICES
— — 100 µAdc
— — 500
— — 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
IEBO
— — 100 µAdc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
BUL146 BUL146F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1000
800
600
400
200
0
0
IC/IB = 5
IC/IB = 10
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
TJ = 125°C
TJ = 25°C
24 6
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
8
4000
3500
3000 IC/IB = 5
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
2500
IC/IB = 10
2000
1500
1000
500
0
0 24 68
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, toff
2500
IB(off) = IC/2
2000
IC/IB = 5
VCC = 15 V
VZ = 300 V
LC = 200 µH
1500
1000
500
TJ = 25°C
TJ = 125°C
IC/IB = 10
0
01 23 4 5 6 78
IC COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, tsi
4000
TJ = 25°C
IB(off) = IC/2
3500
TJ = 125°C
VCC = 15 V
3000
IC = 3 A
VZ = 300 V
LC = 200 µH
2500
2000
1500
1000
500 IC = 1.3 A
0
3 4 5 67
hFE, FORCED GAIN
Figure 10. Inductive Storage Time, tsi(hFE)
250
tc
200
150 tfi
100
IB(off) = IC/2
50 VCC = 15 V
VZ = 300 V
TJ = 25°C
0 LC = 200 µH
TJ = 125°C
01 2 3 4 56 78
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
250
200
150 tfi
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
tc LC = 200 µH
100
TJ = 25°C
TJ = 125°C
50
0 12 3 4 56 7
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
8
4 Motorola Bipolar Power Transistor Device Data
4페이지 1
D = 0.5
TYPICAL THERMAL RESPONSE
BUL146 BUL146F
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.1 1 10 100
t, TIME (ms)
Figure 20. Typical Thermal Response (ZθJC(t)) for BUL146
1000
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.1
1
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
10
t, TIME (ms)
100
1000
10000
100000
Figure 21. Typical Thermal Response (ZθJC(t)) for BUL146F
Motorola Bipolar Power Transistor Device Data
7
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BUL146 | POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS | Motorola Inc |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |