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PDF BUL147 Data sheet ( Hoja de datos )
| Número de pieza | BUL147 | |
| Descripción | POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUL147 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL147/D
™Designer's Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
BUL147*
BUL147F*
*Motorola Preferred Device
The BUL147/BUL147F have an applications specific state–of–the–art die designed
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power
supplies for all types of electronic equipment. These high–voltage/high–speed
transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Parametric Distributions are Tight and Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol BUL147 BUL147F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
Operating and Storage Temperature
THERMAL CHARACTERISTICS
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
TJ, Tstg
400
700
9.0
8.0
16
4.0
8.0
— 4500
— 3500
— 1500
125 45
1.0 0.36
– 65 to 150
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/°C
°C
Rating
Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
1.0 2.78
62.5 62.5
260
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
BUL147
CASE 221A–06
TO–220AB
BUL147F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Typ Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
ICES
— — 100 µAdc
— — 500
— — 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
— — 100 µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
3–1
1 page  
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
BUL147 BUL147F
180
TJ = 25°C
IB(off) = IC/2
160
TJ = 125°C
VCC = 15 V
VZ = 300 V
IC = 2 A
LC = 200 µH
140
120
100
80
60 IC = 4.5 A
3 456
7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
300
IC = 2 A
IB(off) = IC/2
VCC = 15 V
250 VZ = 300 V
LC = 200 µH
200
150
IC = 4.5 A
100
TJ = 25°C
50 TJ = 125°C
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
100
DC (BUL147)
5 ms
10
1
DC (BUL147F)
0.1
GUARANTEED SAFE OPERATING AREA INFORMATION
9
1 ms 10 µs 1 µs
8
7
EXTENDED
SOA
6
5
4
3
2
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
–5V
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
1
0
VBE(off) = 0 V
–1, 5 V
0 100 200 300 400 500 600 700 800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
1.0
0.8
SECOND BREAKDOWN
DERATING
0.6
0.4
THERMAL DERATING
0.2
0.0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figure 20
and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–biased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
Motorola Bipolar Power Transistor Device Data
3–5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUL147.PDF ] | |
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