|
|
|
부품번호 | BUL44 기능 |
|
|
기능 | NPN Bipolar Power Transistor | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
BUL44G
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot−to−Lot
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
PD
Value
400
700
9.0
2.0
5.0
1.0
2.0
50
0.4
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg −65 to 150 _C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
http://onsemi.com
POWER TRANSISTOR
2.0 AMPERES, 700 VOLTS,
40 AND 100 WATTS
123
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
BUL44G
AY WW
BUL44
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUL44G
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 7
1
Publication Order Number:
BUL44/D
100
TJ = 125°C
TJ = 25°C
10
BUL44G
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
100
TJ = 125°C
TJ = 25°C
TJ = - 20°C
10
VCE = 5 V
1.0
0.01
0.1 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain at 1 Volt
10
1.0
0.01
0.1 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain at 5 Volts
10
2.0
TJ = 25°C
1.0
10
IC/IB = 10
1.0
IC/IB = 5
1.5 A 2 A
0.1
1A
0.4 A
IC = 0.2 A
0
1.0 10
100
0.01
1000 0.01
0.1
TJ = 25°C
TJ = 125°C
1.0 10
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.2
1.1
1.0
0.9
0.8
0.7 TJ = 25°C
0.6
TJ = 125°C
0.5
0.4
0.01
0.1 1.0
IC, COLLECTOR CURRENT (AMPS)
IC/IB = 5
IC/IB = 10
Figure 5. Base−Emitter Saturation Region
10
1000
100
10
1.0
1.0
CIB TJ = 25°C
f = 1 MHz
COB
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
100
http://onsemi.com
4
4페이지 BUL44G
5
4 VCE
3 dyn 1 ms
2 dyn 3 ms
1
0
-1
-2 90% IB
-3 1 ms
-4
-5 IB
3 ms
0 1 2 3 TIM4 E 5 6 7 8
Figure 18. Dynamic Saturation Voltage Measurements
10
9 IC
8
7
90% IC
tfi
tsi
6
5 VCLAMP
4
3 IB
10% VCLAMP
90% IB1
tc 10% IC
2
1
0
0 12 3 4 5 6 7 8
TIME
Figure 19. Inductive Switching Measurements
+15 V
1 mF
MPF930
+10 V
50 W
COMMON
-Voff
150 W
3W
100 W
3W
MPF930
MTP8P10
100 mF
MTP8P10
MUR105
RB1
Iout
A
VCE
IB1
IB
500 mF
MJE210
150 W
3W
RB2
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
1.0
0.5
0.2
0.01
0.1
0.05
0.01
0.02
SINGLE PULSE
0.01
0.01
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC1(t)
0.1 1.0 10
100
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for BUL44
http://onsemi.com
7
1000
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ BUL44.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUL416 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
BUL416T | High voltage fast-switching NPN power transistor | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |