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PDF BUL44F Data sheet ( Hoja de datos )
| Número de pieza | BUL44F | |
| Descripción | POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL44/D
™Designer's Data Sheet
SWITCHMODE™
NPN Bipolar Power Transistor
For Switching Power Supply Applications
BUL44 *
BUL44F*
*Motorola Preferred Device
The BUL44/BUL44F have an applications specific state–of–the–art die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Full Characterization at 125°C
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• BUL44F, Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol BUL44 BUL44F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
IBM
VISOL
PD
400
700
9.0
2.0
5.0
1.0
2.0
— 4500
— 3500
— 1500
50 25
0.4 0.2
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg
– 65 to 150
°C
Rating
Symbol BUL44 BUL44F Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
RθJC
RθJA
TL
2.5 5.0
62.5 62.5
260
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
POWER TRANSISTOR
2.0 AMPERES
700 VOLTS
40 and 100 WATTS
BUL44
CASE 221A–06
TO–220AB
BUL44F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Typ Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)
ICES
— — 100 µAdc
— — 500
— — 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
IEBO
— — 100 µAdc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
BUL44 BUL44F
170
160
IB(off) = IC/2
VCC = 15 V
150 VZ = 300 V
LC = 200 µH
140 IC = 0.4 A
130
120
110
100 IC = 1 A
90
TJ = 25°C
TJ = 125°C
80
5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
190
170
IC = 1 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
150 LC = 200 µH
130
IC = 0.4 A
110
90
70 TJ = 25°C
TJ = 125°C
50
5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
10
DC (BUL44)
1.0
DC (BUL44F)
GUARANTEED SAFE OPERATING AREA INFORMATION
5 ms 1 ms
10 µs
1 µs
50 µs
Extended
SOA
2.5
2.0
1.5
TC ≤ 125°C
GAIN ≥ 4
LC = 500 µH
0.1
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 15. Forward Bias Safe Operating Area
1.0
SECOND BREAK–
0.8 DOWN DERATING
0.6
THERMAL DERATING
0.4
0.2
0
20 40
60 80 100 120
TC, CASE TEMPERATURE (°C)
140 160
Figure 17. Forward Bias Power Derating
Motorola Bipolar Power Transistor Device Data
1.0
–5 V
0.5
–1.5 V
0V
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of figure 15 is based on TC
= 25°C; TJ(PK) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown on figure 15 may be found at
any case temperature by using the appropriate curve on
figure 17. TJ(PK) may be calculated from the data in figure 20
and 21. At any case temperatures, thermal limitations will
reduce the power than can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BUL44F.PDF ] | |
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