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PDF BUL45 Data sheet ( Hoja de datos )
| Número de pieza | BUL45 | |
| Descripción | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUL45 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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BUL45
NPN Silicon Power
Transistor
High Voltage SWITCHMODEt Series
Designed for use in electronic ballast (light ballast) and in
Switchmode Power supplies up to 50 Watts.
Features
• Improved Efficiency Due to:
♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)
♦ Low Power Losses (On−State and Switching Operations)
♦ Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)
♦ @ IC = 2.0 A, IB1 = IB2 = 0.4 A
• Full Characterization at 125°C
• Tight Parametric Distributions Consistent Lot−to−Lot
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
www.DataSheet4U.com
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
VCEO 400 Vdc
VCES 700 Vdc
VEBO 9.0 Vdc
IC 5.0 Adc
ICM 10
Base Current
IB 2.0 Adc
Total Device Dissipation @ TC = 25_C PD 75 W
Derate above 25°C
0.6 W/_C
Operating and Storage Temperature
TJ, Tstg −65 to 150 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.65 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
http://onsemi.com
POWER TRANSISTOR
5.0 AMPERES, 700 VOLTS,
35 AND 75 WATTS
1
23
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
BUL45G
AY WW
BUL45
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
1
ORDERING INFORMATION
Device
Package
Shipping
BUL45
TO−220
50 Units / Rail
BUL45G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUL45/D
1 page  
BUL45
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
150 300
140
130
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
250
IC = 1 A LC = 200 mH
120 200
IC = 1 A
VCC = 15 V
VZ = 300 V
IB(off) = IC/2
LC = 200 mH
110
100 150
90
80 IC = 2 A
70
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time, tfi(hFE)
100
TJ = 25°C
TJ = 125°C
IC = 2 A
50
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 14. Crossover Time
100
DC (BUL45)
5 ms
10
GUARANTEED SAFE OPERATING AREA INFORMATION
6
1 ms 50 ms 10 ms 1 ms
5
4
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 mH
1.0
EXTENDED
3
SOA
0.1
0.01
10
100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
2
−5 V
1
VBE(off) = 0 V
−1.5 V
0
300 400 500 600 700 800
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
1.0 Safe operating area curves indicate IC − VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
0.8
SECOND BREAKDOWN
DERATING
must not be subjected to greater dissipation than the curves
indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown pulse
0.6 limits are valid for duty cycles to 10% but must be derated when
TC ≥ 25°C. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown in
0.4 Figure 15 may be found at any case temperature by using the
THERMAL DERATING
0.2
appropriate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20. At any case temperatures, thermal limitations
will reduce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive loads,
0
20 40
60
80
100
120
140
160
high voltage and current must be sustained simultaneously during
turn−off with the base−to−emitter junction reverse−biased. The
TC, CASE TEMPERATURE (°C)
safe level is specified as a reverse−biased safe operating area
Figure 17. Forward Bias Power Derating
(Figure 16). This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUL45.PDF ] | |
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