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PDF BUL45F Data sheet ( Hoja de datos )
| Número de pieza | BUL45F | |
| Descripción | POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45/D
™Designer's Data Sheet
NPN Silicon Power Transistor
tHigh Voltage SWITCHMODE Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
• Improved Efficiency Due to:
— Low Base Drive Requirements (High and Flat DC Current Gain hFE)
— Low Power Losses (On–State and Switching Operations)
— Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ)
— Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A
• Full Characterization at 125°C
• Tight Parametric Distributions Consistent Lot–to–Lot
• BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
BUL45 *
BUL45F*
*Motorola Preferred Device
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
MAXIMUM RATINGS
Rating
Symbol BUL45 BUL45F Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
VISOL
PD
400
700
9.0
5.0
10
2.0
— 4500
— 3500
— 1500
75 35
0.6 0.28
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/°C
BUL45
CASE 221A–06
TO–220AB
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
THERMAL CHARACTERISTICS
Rating
Symbol MJE18006 MJF18006
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.65
62.5
3.55
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
°C
Unit
°C/W
Min
BUL45F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
—
—
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
— — 100 µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
ICES
— — 10 µAdc
— — 100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
IEBO
— — 100 µAdc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
BUL45 BUL45F
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
150 300
140
130
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
250
IC = 1 A LC = 200 µH
120 200
110
100 150
IC = 1 A
VCC = 15 V
VZ = 300 V
IB(off) = IC/2
LC = 200 µH
90
80 IC = 2 A
70
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
100
TJ = 25°C
TJ = 125°C
IC = 2 A
50
3 4 5 6 7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time, tfi(hFE)
Figure 14. Crossover Time
100
DC (BUL45)
5 ms
10
GUARANTEED SAFE OPERATING AREA INFORMATION
6
1 ms 50 µs 10 µs 1 µs
5
4
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
1.0
DC (BUL45F)
0.1
EXTENDED
SOA
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 15. Forward Bias Safe Operating Area
3
2
–5 V
1
VBE(off) = 0 V
–1.5 V
0
300 400 500 600 700 800
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe Operating Area
1.0
0.8
SECOND BREAKDOWN
DERATING
0.6
0.4
THERMAL DERATING
0.2
0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC ≥ 25°C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figures 20
and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–biased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
Motorola Bipolar Power Transistor Device Data
5
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