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PDF BUL50A Data sheet ( Hoja de datos )
| Número de pieza | BUL50A | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
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SEME
LAB
BUL50A
MECHANICAL DATA
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
TO–247
5.25 (0.215)
BSC
Pin 1 – Base Pad 2 – Collector Pad 3 – Emitter
15.2
max
14
4.6
max
2.0
4.4
4
4
.25
.15
Dia.
123
12.7
max
21.0
max
13.6
min
5.5
11
1.15
0.95
SOT93
0 .4
1.6
Pin 1 – Base Pad 2 – Collector Pad 3 – Emitter
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
1000V
VCEO
Collector – Emitter Voltage (IB = 0)
500V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
15A
IC(PK)
Peak Collector Current
30A
IB Base Current
5A
Ptot Total Dissipation at Tcase = 25°C
125W
Tstg Operating and Storage Temperature Range
–55 to +175°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 3/95
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL50A.PDF ] | |
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