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PDF BUL52AFI Data sheet ( Hoja de datos )

Número de pieza BUL52AFI
Descripción ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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No Preview Available ! BUL52AFI Hoja de datos, Descripción, Manual

SEME
LAB
BUL52AFI
MECHANICAL DATA
Dimensions in mm
10.2
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3.6 Dia.
Designed for use in
electronic ballast applications
123
1.3
0 .8 5
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2.54 2.54
ISOLATED TO220
Pin 1 – Base Pin 2 – Collectorn Pin3 – Emitter
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
1000V
VCEO
Collector – Emitter Voltage (IB = 0)
500V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
6A
IC(PK)
Peak Collector Current
10A
IB Base Current
2.5A
Ptot Total Dissipation at Tcase = 25°C
45W
Tstg Operating and Storage Temperature Range
–55 to 150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/97

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