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PDF BUL53B Data sheet ( Hoja de datos )
| Número de pieza | BUL53B | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
BUL53B
MECHANICAL DATA
Dimensions in mm
10.2
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
4 .5
1.3
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3.6 Dia.
123
1.3
0 .8 5
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2.54 2.54
Pin 1 – Base
TO220
Pin 2 – Collector
0 .5
Pin 3 – Emitter
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage(IE=0)
500V
VCEO
Collector – Emitter Voltage (IB = 0)
250V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
12A
IC(PK)
Peak Collector Current
24A
IB Base Current
4A
Ptot Total Dissipation at Tcase = 25°C
90W
Tstg Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL53B.PDF ] | |
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| BUL53A | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Seme LAB |
| BUL53B | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Seme LAB |
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