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PDF BUL53BSMD Data sheet ( Hoja de datos )
| Número de pieza | BUL53BSMD | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE/ HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
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BUL53BSMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
2
3 .6 0 (0 .1 4 2 )
M ax.
ADVANCED DISTRIBUTED
BASE DESIGN
HIGH VOLTAGE, HIGH SPEED NPN
SILICON POWER TRANSISTOR
• CERAMIC SURFACE MOUNT PACKAGE
• FULL MIL/AEROSPACE TEMPERATURE
RANGE
• SCREENING OPTIONS FOR MILITARY AND
SPACE APPLICATIONS
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE (VCBO = 800V)
• FAST SWITCHING (tf = 100ns)
• HIGH ENERGY RATING
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
Pad 1 – Base
SMD1
Pad 2 – Collector
FEATURES
0 .5 0 (0 .0 2 0 )
0 . 2 6 ( 0 . 0 1 0 ) • Multi-Base design for efficient energy
distribution across the chip.
Pad 3 – Emitter
• SIgnificantly improved switching and energy
ratings across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple guard rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
500V
VCEO
Collector – Emitter Voltage (IB = 0)
250V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Collector Current
12A
IC(PK)
Peak Collector Current
20A
IB Base Current
3A
PD Power Dissipation
60W
R? Thermal Impedance (when mounted on thermally conducting PCB)
3.0°C/W
Tj Maximum Junction Temperature
200°C
Tstg Storage Temperature Range
–55 to +200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL53BSMD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUL53BSMD | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE/ HIGH SPEED NPN SILICON POWER TRANSISTOR | Seme LAB |
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