BUL58BSMD Datasheet PDF - Seme LAB
| Part Number | BUL58BSMD | |
| Description | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Manufacturers | Seme LAB | |
| Logo |  |
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There is a preview and BUL58BSMD download ( pdf file ) link at the bottom of this page. Total 2 Pages | ||
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BUL58BSMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 )
M ax.
13
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2
FEATURES
• Multi–base for efficient energy distribution
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
SMD1 PACKAGE
batch.
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter • Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IC(PK)
IB
Ptot
Collector – Base Voltage
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (IC = 0)
Collector Current
Peak Collector Current
Base Current
Total Dissipation at Tcase = 25°C
Derate above 25°C when used on efficient heatsink
180V
90V
10V
7A
10A
2A
50W
0.28W/°C
Tstg Operating and Storage Temperature Range
–65 to 200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/00
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUL58BSMD electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUL58BSMD.PDF Datasheet ] | |
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